PART |
Description |
Maker |
29F4000 MX29F400TTC-12 MX29F400TTC-90 |
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY 256K X 16 FLASH 5V PROM, 120 ns, PDSO48 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
MX29F400CBMI-70G MX29F400CBTI-70G |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY 256K X 16 FLASH 5V PROM, 70 ns, PDSO44 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Macronix International Co., Ltd.
|
MBM29LV400BC-70PFTN MBM29LV400BC-90PFTN MBM29LV400 |
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT IC,EEPROM,FLASH,256KX16/512KX8,CMOS,TSSOP,48PIN,PLASTIC
|
SPANSION[SPANSION] Fujitsu
|
KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
BM29F400 BM29F400T |
5-Volt Flash 256Kx16/512Kx8 From old datasheet system
|
Winbond Electronics
|
HT27LC4096 |
CMOS 256Kx16-Bit OTP EPROM
|
holtek
|
N04L163WC2A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
KM6164002A |
256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MX29F040TC-55 MX29F040TC-12 MX29F040QC-90 MX29F040 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
MX29F040 MX29F040TC-70 MX29F040TC-70G MX29F040TI-9 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
HT23C040H 23C040H |
CMOS 512KX8-Bit High Speed Mask ROM From old datasheet system
|
holtek
|